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MTY100N10E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTY100N10E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
Power Field Effect Transistor
NâChannel EnhancementâMode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drainâtoâsource diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
⢠Avalanche Energy Specified
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
MTY100N10E
Motorola Preferred Device
TMOS POWER FET
100 AMPERES
100 VOLTS
RDS(on) = 0.011 OHM
®
D
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
DrainâSource Voltage
DrainâGate Voltage (RGS = 1 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous @ TC = 25°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25 ⦠)
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
CASE 340Gâ02, STYLE 1
TOâ264
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
EAS
Value
100
100
± 20
± 40
100
300
300
2.38
â 55 to 150
250
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
RθJC
RθJA
TL
0.42
°C/W
40
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© MMoototroorlao,lIancT. 1M99O5S Power MOSFET Transistor Device Data
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