MTSF1P02HD Datasheet, PDF (1/12 Pages) Motorola, Inc – SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTSF1P02HD/D
Advance Information
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistor
Micro8™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8™ devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
• Miniature Micro8 Surface Mount Package — Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
G
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) *
Rating
MTSF1P02HD
Motorola Preferred Device
SINGLE TMOS
POWER FET
1.8 AMPERES
20 VOLTS
RDS(on) = 0.16 OHM
™
D
CASE 846A–02, Style 1
Micro8
S
Source
18
Drain
Source
27
Drain
Source
36
Drain
Gate
45
Drain
Top View
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (2)
Drain Current — Continuous @ TA = 70°C (2)
Drain Current — Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)
VDSS
VDGR
VGS
ID
ID
IDM
PD
20
20
± 8.0
1.8
1.6
14.4
1.8
14.3
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)
PD
0.78
Watts
6.25
mW/°C
Operating and Storage Temperature Range
THERMAL RESISTANCE
TJ, Tstg – 55 to 150 °C
Rating
Symbol
Typ.
Max.
Unit
Thermal Resistance — Junction to Ambient, PCB Mount (1)
Thermal Resistance — Junction to Ambient, PCB Mount (2)
R_θJA
55
R_θJA
125
* Negative signs for P–Channel device omitted for clarity.
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)
(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
70
°C/W
160
DEVICE MARKING
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
AB
MTSF1P02HDR2
13″
12 mm embossed tape
4000 units
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Berquist Company.
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