MTP8N50E Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters, PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable
G
to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
D
S
Order this document
by MTP8N50E/D
MTP8N50E
TMOS POWER FET
8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM
CASE 221A–06, Style 5
TO-220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
W Drain–to–Gate Voltage (RGS = 1.0 M )
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
Drain Current — Continuous @ TC = 25°C
m ^{Drain Current — Continuous @ TC = 100°C}
Drain Current — Single Pulse (tp ≤ 10 s)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 )
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
500
500
±20
±40
8.0
5.0
32
125
1.0
– 55 to 150
510
R_qJC
1.0
R_qJA
62.5
TL
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
REV 2
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