MTP75N03HDL Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advanced Information
HDTMOS E-FET ™
High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
• Ultra Low RDS(on), High–Cell Density, HDTMOS
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
™
D
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by MTP75N03HDL/D
MTP75N03HDL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
75 AMPERES
RDS(on) = 9.0 mOHM
25 VOLTS
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Single Pulse (tp ≤ 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
25
25
± 15
± 20
75
59
225
150
1.0
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25 Ω)
TJ, Tstg
EAS
– 55 to 175
280
Thermal Resistance — Junction to Case
— Junction to Ambient
R_θJC
1.0
R_θJA
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
°C
mJ
°C/W
°C
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
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