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MTP60N06HD Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP60N06HD/D
⢠Designer's Data Sheet
HDTMOS E-FET.â¢
Power Field Effect Transistor
NâChannel EnhancementâMode Silicon Gate
This advanced highâcell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
MTP60N06HD
Motorola Preferred Device
TMOS POWER FET
60 AMPERES
60 VOLTS
RDS(on) = 0.014 OHM
â¢
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
G
CASE 221Aâ06, Style 5
TOâ220AB
S
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
â NonâRepetitive (tp ⤠10 ms)
VDSS
60
Vdc
VDGR
60
Vdc
VGS
± 20
Vdc
VGSM
± 30
Vpk
Drain Current â Continuous
â Continuous @ 100°C
â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
ID
60
Adc
ID
42.3
IDM
180
Apk
PD
150
Watts
1.0
W/°C
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 â¦)
TJ, Tstg
â 55 to 175
°C
EAS
540
mJ
Thermal Resistance â Junction to Case
â Junction to Ambient
RθJC
RθJA
1.0
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET, Designerâs and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoororolal,aInTc.M19O9S5 Power MOSFET Transistor Device Data
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