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MTP60N05HDL Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FET.â¢
Power Field Effect Transistor
MTP60N05HDL
Motorola Preferred Device
NâChannel EnhancementâMode Silicon Gate
This advanced highâcell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
TMOS POWER FET
60 AMPERES
50 VOLTS
RDS(on) = 0.014 OHM
â¢
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
D
G
CASE 221Aâ06, Style 5
TOâ220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
â Continuous @ 100°C
â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
50
Vdc
50
Vdc
± 15
Vdc
± 20
Vpk
60
Adc
42
180
Apk
150
Watts
1.0
W/°C
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 â¦)
Thermal Resistance â Junction to Case
â Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from Case for 5 Seconds
TJ, Tstg
EAS
RθJC
RθJA
TL
â 55 to 175
540
1.0
62.5
260
°C
mJ
°C/W
°C
EâFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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