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MTP60N05HDL Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM
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SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FET.™
Power Field Effect Transistor
MTP60N05HDL
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
TMOS POWER FET
60 AMPERES
50 VOLTS
RDS(on) = 0.014 OHM
™
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
D
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
50
Vdc
50
Vdc
± 15
Vdc
± 20
Vpk
60
Adc
42
180
Apk
150
Watts
1.0
W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 Seconds
TJ, Tstg
EAS
RθJC
RθJA
TL
– 55 to 175
540
1.0
62.5
260
°C
mJ
°C/W
°C
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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