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MTP4N50E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP4N50E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
High Energy Power FET
NâChannel EnhancementâMode Silicon Gate
This advanced high voltage TMOS EâFET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drainâtoâsource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
⢠Avalanche Energy Capability Specified at Elevated
Temperature
⢠Low Stored Gate Charge for Efficient Switching
⢠Internal SourceâtoâDrain Diode Designed to Replace External
Zener Transient Suppressor â Absorbs High Energy in the
G
Avalanche Mode
⢠SourceâtoâDrain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
®
D
S
MTP4N50E
Motorola Preferred Device
TMOS POWER FET
4.0 AMPERES
500 VOLTS
RDS(on) = 1.5 OHMS
CASE 221Aâ06, Style 5
TOâ220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â Nonârepetitive
VDSS
VDGR
VGS
VGSM
500
Vdc
500
Vdc
± 20
Vdc
± 40
Vpk
Drain Current â Continuous
Drain Current â Pulsed
ID
4.0
Adc
IDM
10
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
75
Watts
0.6
W/°C
Operating and Storage Temperature Range
TJ, Tstg
â 55 to 150
°C
UNCLAMPED DRAINâTOâSOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse DrainâtoâSource Avalanche Energy â TJ = 25°C
Single Pulse DrainâtoâSource Avalanche Energy â TJ = 100°C
Repetitive Pulse DrainâtoâSource Avalanche Energy
WDSR (1)
280
mJ
44
WDSR (2)
7.4
THERMAL CHARACTERISTICS
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
(1) VDD = 50 V, ID = 4.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
RθJC
RθJA
TL
1.67
°C/W
62.5
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
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