MTP40N10E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
N–Channel
D
Order this document
by MTP40N10E/D
MTP40N10E
TMOS POWER FET
40 AMPERES
100 VOLTS
RDS(on) = 0.04 OHM
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc, PEAK IL = 40 Apk, L = 1.0 mH, RG = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
R_θJC
R_θJA
TL
Value
100
100
± 20
± 40
40
29
140
169
1.35
– 55 to 150
800
0.74
62.5
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
REV 1
© ^MMo^oto^toro^rl^oa,^laInc^T.^M19^O97^{S Power MOSFET Transistor Device Data}
1