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MTP3N60E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP3N60E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
High Energy Power FET
NâChannel EnhancementâMode Silicon Gate
This advanced high voltage TMOS EâFET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drainâtoâsource diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
⢠Avalanche Energy Capability Specified at Elevated
Temperature
⢠Low Stored Gate Charge for Efficient Switching
⢠Internal SourceâtoâDrain Diode Designed to Replace External
Zener Transient Suppressor â Absorbs High Energy in the
G
Avalanche Mode
⢠SourceâtoâDrain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
®
D
S
MTP3N60E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS
CASE 221Aâ09, Style 5
TO-220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â Nonârepetitive
VDSS
VDGR
VGS
VGSM
600
Vdc
600
Vdc
± 20
Vdc
± 40
Vpk
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
ID
3.0
Adc
ID
2.4
IDM
14
PD
75
Watts
0.6
W/°C
Operating and Storage Temperature Range
TJ, Tstg
â 55 to 150
°C
UNCLAMPED DRAINâTOâSOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse DrainâtoâSource Avalanche Energy â TJ = 25°C
Single Pulse DrainâtoâSource Avalanche Energy â TJ = 100°C
Repetitive Pulse DrainâtoâSource Avalanche Energy
WDSR(1)
290
mJ
46
WDSR(2)
7.5
THERMAL CHARACTERISTICS
Thermal Resistance â Junction to Case°
Thermal Resistance â Junction to Ambient°
RθJC
RθJA
1.67
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
(1) VDD = 50 V, ID = 3.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
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