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MTP3N25E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
⢠Designer's Data Sheet
TMOS E-FET.â¢
Power Field Effect Transistor
NâChannel EnhancementâMode Silicon Gate
This advanced TMOS EâFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drainâtoâsource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
®
D
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by MTP3N25E/D
MTP3N25E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
250 VOLTS
RDS(on) = 1.4 OHM
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
G
CASE 221Aâ06, Style 5
TOâ220AB
S
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
250
250
± 20
± 40
3.0
2.0
9.0
40
0.32
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
â 55 to 150
°C
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 â¦)
EAS
45
mJ
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
RθJC
RθJA
3.13
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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