MTP3N120E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTP3N120E/D
Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high–voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls, and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
G
* See App. Note AN1327 — Very Wide Input Voltage Range;
Off–line Flyback Switching Power Supply
®
D
S
MTP3N120E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
1200 VOLTS
RDS(on) = 5.0 OHM
CASE 221A–06, Style 5
TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 50 ms)
Drain Current — Continuous @ 25°C
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
t UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ 150°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25 Ω)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
Value
1200
1200
± 20
± 40
3.0
2.2
11
125
1.0
– 55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
EAS
mJ
101
R_θJC
R_θJA
TL
1.0
°C/W
62.5
260
°C
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