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MTP3N100E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP3N100E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
Power Field Effect Transistor
NâChannel EnhancementâMode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltageâblocking capability without
degrading performance over time. In addition, this advanced TMOS
EâFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
®
D
MTP3N100E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
1000 VOLTS
RDS(on) = 4.0 OHM
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
G
CASE 221Aâ06, Style 5
TOâ220AB
S
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
VDSS
VDGR
VGS
VGSM
1000
Vdc
1000
Vdc
± 20
Vdc
± 40
Vpk
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
ID
3.0
Adc
ID
2.4
IDM
9.0
Apk
PD
125
Watts
1.0
W/°C
Operating and Storage Temperature Range
TJ, Tstg
â 55 to 150
°C
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 150 Vdc, VGS = 10 Vdc, IL = 7.0 Apk, L = 10 mH, RG = 25 â¦)
EAS
245
mJ
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
RθJC
RθJA
1.00
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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