MTP1N100E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTP1N100E/D
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
D
MTP1N100E
Motorola Preferred Device
TMOS POWER FET
1.0 AMPERES
1000 VOLTS
RDS(on) = 9.0 OHM
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
G
CASE 221A–06, Style 5
TO–220AB
S
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VDSS
1000
Vdc
VDGR
1000
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
ID
1.0
Adc
ID
0.8
IDM
3.0
Apk
PD
75
Watts
0.6
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
EAS
45
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
1.67
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
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