MTP16N25E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
D
Order this document
by MTP16N25E/D
MTP16N25E
Motorola Preferred Device
TMOS POWER FET
16 AMPERES
250 VOLTS
RDS(on) = 0.25 OHM
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
Symbol
Value
Unit
VDSS
250
Vdc
VDGR
250
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
ID
16
Adc
ID
10
IDM
56
Apk
PD
125
Watts
1.0
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
384
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
R_θJC
R_θJA
1.0
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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