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MTP1306 Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
HDTMOS E-FET.™
High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
Order this document
by MTP1306/D
MTP1306
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 221A–06
TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω)
Thermal Resistance — Junction–to–Case
— Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
TL
Value
30
30
± 20
± 20
75
59
225
150
1.2
– 55 to 150
280
0.8
62.5
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
© MMoototroorlao,lIancT. 1M99O7S Power MOSFET Transistor Device Data
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