|
MTP1306 Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
HDTMOS E-FET.â¢
High Density Power FET
NâChannel EnhancementâMode Silicon Gate
This advanced highâcell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
Order this document
by MTP1306/D
MTP1306
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 221Aâ06
TOâ220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
â Continuous @ 100°C
â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 â¦)
Thermal Resistance â JunctionâtoâCase
â JunctionâtoâAmbient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from Case for 5.0 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
TL
Value
30
30
± 20
± 20
75
59
225
150
1.2
â 55 to 150
280
0.8
62.5
260
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EâFET and HDTMOS are trademarks of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
© MMoototroorlao,lIancT. 1M99O7S Power MOSFET Transistor Device Data
1
|
▷ |