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MTP1302 Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
HDTMOS E-FETâ¢
High Density Power FET
NâChannel EnhancementâMode Silicon Gate
This advanced high cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode Is Characterized for Use In Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
Order this document
by MTP1302/D
MTP1302
TMOS POWER FET
42 AMPERES
30 VOLTS
RDS(on) = 22 mW
â¢
CASE 221Aâ06
TOâ220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 42 Apk, L = 0.25 mH, RG = 25 â¦)
TJ, Tstg
EAS
Thermal Resistance
Junction to Case
JunctionâtoâAmbient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from Case for 5 seconds
RθJC
RθJA
TL
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EâFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Value
30
30
± 20
± 20
42
20
126
74
0.592
â 55 to 150
220
1.67
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
©MMotootorroollaa, TInMc. O19S97Power MOSFET Transistor Device Data
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