MTP10N10E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTP10N10E/D
™ Designer's Data Sheet
TMOS IV
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced “E” series of TMOS power MOSFETs is designed
to withstand high energy in the avalanche and commutation
modes. These new energy efficient devices also offer drain–to–
source diodes with fast recovery times. Designed for low voltage,
high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating area are critical, and offer additional safety margin
against unexpected voltage transients.
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode — Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100°C
G
• Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Drain Current — Pulsed
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
MTP10N10E
®
D
TMOS POWER FETs
10 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM
S
CASE 221A–06, Style 5
TO–220AB
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
R_θJC
R_θJA
TL
Value
100
100
± 20
10
25
75
0.6
– 65 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
1.67
°C/W
62.5
275
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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