MTE30N50E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
ISOTOP™ TMOS E-FET.™
Power Field Effect Transistor
MTE30N50E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new
energy design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, PWM motor controls, and other
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
• 2500 V RMS Isolated ISOTOP Package
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
G
• IDSS and VDS(on) Specified at Elevated Temperature
• U.L. Recognized, File #E69369
®
D
S
TMOS POWER FET
30 AMPERES
500 VOLTS
RDS(on) = 0.150 OHM
4
1
3
2
SOT–227B
1. Source
2. Gate
3. Drain
4. Source 2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous @ 25°C
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
500
Vdc
500
Vdc
± 20
Vdc
± 40
Vpk
30
Adc
12
80
Apk
250
Watts
2.0
W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL= 30 Apk, L = 10 mH, RG = 25 Ω)
TJ, Tstg
– 55 to 150
°C
EAS
mJ
3000
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS–THOMSON Microelectronics.
0.5
62.5
260
°C/W
°C
Preferred devices are Motorola recommended choices for future use and best overall value.
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