MTE215N10E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTE215N10E/D
™ Designer's Data Sheet
ISOTOP™ TMOS E-FET.™
Power Field Effect Transistor
MTE215N10E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• 2500 V RMS Isolated Isotop Package
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• IDSS and VDS(on) Specified at Elevated Temperature
• U. L. Recognized, File #E69369
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
TMOS POWER FET
215 AMPERES
100 VOLTS
RDS(on) = 0.0055 OHM
®
4
1
3
2
D
S
Symbol
SOT–227B
1. Source
2. Gate
3. Drain
4. Source 2
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VDSS
VDGR
VGS
VGSM
100
Vdc
100
Vdc
± 20
Vdc
± 40
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
215
Adc
ID
136
IDM
860
Total Power Dissipation
Derate above 25°C
PD
460
Watts
3.70
W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 215 Apk, L = 0.017 mH, RG = 25 Ω,)
TJ, Tstg
– 40 to 150
°C
EAS
mJ
400
RMS Isolation Voltage
VISO
2500
Vac
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
0.28
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS–THOMSON Microelectronics.
Preferred devices are Motorola recommended choices for future use and best overall value.
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