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MTD9N10E Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD9N10E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
Power Field Effect Transistor
DPAK for Surface Mount
NâChannel EnhancementâMode Silicon Gate
This advanced TMOS EâFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drainâtoâsource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Surface Mount Package Available in 16 mm, 13âinch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
G
⢠Replaces MTD6N10
®
D
S
MTD9N10E
Motorola Preferred Device
TMOS POWER FET
9.0 AMPERES
100 VOLTS
RDS(on) = 0.25 OHM
CASE 369Aâ13, Style 2
DPAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
VDSS
100
Vdc
VDGR
100
Vdc
VGS
± 20
Vdc
VGSM
± 30
Vpk
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 9.0 Apk, L = 1.0 mH, RG = 25 â¦)
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Thermal Resistance â Junction to Ambient, when mounted to minimum recommended pad size
Maximum Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
9.0
5.0
27
40
0.32
1.75
â 55 to 150
40
3.13
100
71.4
260
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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