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MTD3302 Datasheet, PDF (1/4 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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WaveFET™
Power Surface Mount Products
HDTMOS Single N-Channel
™
Field Effect Transistor
WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and
D
Extends Battery Life in Portable Applications
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
G
• Avalanche Energy Specified
• Industry Standard DPAK Surface Mount Package
S
Order this document
by MTD3302/D
MTD3302
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 10 mW
CASE 369A– 13, Style 2
DPAK
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain–to–Source Voltage
Drain–to–Gate Voltage
Gate–to–Source Voltage
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 126 mH, IL(pk) = 3.0 A, VDS = 30 Vdc)
Symbol
Value
Unit
VDSS
30
Vdc
VDGR
30
Vdc
VGS
± 20
Vdc
TJ, Tstg – 55 to 150
°C
EAS
mJ
500
DEVICE MARKING
ORDERING INFORMATION
D3302
Device
MTD3302T4
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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