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MTD2955E Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD2955E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
Power Field Effect Transistor
DPAK for Surface Mount
PâChannel EnhancementâMode Silicon Gate
This advanced TMOS EâFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drainâtoâsource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Surface Mount Package Available in 16 mm, 13âinch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
G
⢠Replaces the MTD2955
®
D
S
MTD2955E
Motorola Preferred Device
TMOS POWER FET
12 AMPERES
60 VOLTS
RDS(on) = 0.3 OHM
CASE 369Aâ13, Style 2
DPAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
VDSS
60
Vdc
VDGR
60
Vdc
VGS
± 15
Vdc
VGSM
± 25
Vpk
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
ID
12
Adc
ID
7.0
IDM
36
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD
75
Watts
0.6
W/°C
1.75
Watts
Operating and Storage Temperature Range
TJ, Tstg â 55 to 150
°C
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 3.0 mH, RG = 25 â¦)
EAS
216
mJ
Thermal Resistance â Junction to Case
RθJC
1.67
°C/W
Thermal Resistance â Junction to Ambient
RθJA
100
Thermal Resistance â Junction to Ambient, when mounted to minimum recommended pad size
RθJA
71.4
Maximum Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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