MTD1P50E Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.™
High Energy Power FET
MTD1P50E
Motorola Preferred Device
P–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete ^G
Fast Recovery Diode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
TMOS POWER FET
1.0 AMPERES
500 VOLTS
15 Ω
®
D
CASE 369A–13, Style 2
DPAK Surface Mount
S
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Single Pulse (tp ≤ 50 µs)
VDSS
500
Vdc
VDGR
500
Vdc
VGS
± 20
Vdc
VGSM
± 40
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
1.0
Adc
ID
0.8
IDM
4.0
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
PD
TJ, Tstg
50
0.4
1.75
– 55 to 150
Watts
W/°C
Watts
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
EAS
45
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
R_θJC
2.5
°C/W
R_θJA
100
R_θJA
71.4
TL
260
°C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
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