|
MTD1N80E Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD1N80E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
Power Field Effect Transistor
DPAK for Surface Mount
NâChannel EnhancementâMode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltageâblocking capability without
degrading performance over time. In addition this advanced TMOS
EâFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
G
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Surface Mount Package Available in 16 mm, 13âinch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
®
D
S
MTD1N80E
Motorola Preferred Device
TMOS POWER FET
1.0 AMPERES
800 VOLTS
RDS(on) = 12 OHM
CASE 369Aâ13, Style 2
DPAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâtoâSource Voltage
VDSS
800
Vdc
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
VDGR
800
Vdc
GateâtoâSource Voltage â Continuous
GateâtoâSource Voltage â NonâRepetitive (tp ⤠10 ms)
VGS
± 20
Vdc
VGSM
± 40
Vpk
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
ID
1.0
Adc
ID
0.8
IDM
3.0
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD
48
Watts
0.38
W/°C
1.75
Watts
Operating and Storage Temperature Range
TJ, Tstg â 55 to 150
°C
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 2.0 Apk, L = 10 mH, RG = 25 â¦)
EAS
mJ
20
Thermal Resistance â Junction to Case
RθJC
2.6
°C/W
Thermal Resistance â Junction to Ambient
RθJA
100
Thermal Resistance â Junction to Ambient, when mounted to minimum recommended pad size
RθJA
71.4
Maximum Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1
|
▷ |