MTB75N06HD Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES 60 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTB75N06HD/D
™ Designer's Data Sheet
HDTMOS E-FET.™
High Energy Power FET
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
™
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
D
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
G
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
S
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MTB75N06HD
Motorola Preferred Device
TMOS POWER FET
75 AMPERES
60 VOLTS
RDS(on) = 10 mOHM
CASE 418B–02, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
± 20
Vdc
VGSM
± 30
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
75
Adc
ID
50
IDM
225
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (1)
PD
125
Watts
1.0
W/°C
2.5
Watts
Operating and Storage Temperature Range
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 75 Apk, L = 0.177 mH, RG = 25 Ω)
EAS
500
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R_θJC
R_θJA
R_θJA
1.0
°C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
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