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MTB6N60E1 Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 600 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
TMOS E-FET.â¢
High Energy Power FET
D2PAK-SL Straight Lead
NâChannel EnhancementâMode Silicon Gate
This advanced TMOS EâFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drainâtoâsource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
G
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Short Heatsink Tab Manufactured â Not Sheared
⢠Specially Designed Leadframe for Maximum Power Dissipation
Order this document
by MTB6N60E1/D
MTB6N60E1
Motorola Preferred Device
TMOS POWER FET
6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHM
®
D
CASE 418Câ01, Style 2
D2PAKâSL
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage â Continuous
GateâSource Voltage â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 â¦)
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Thermal Resistance â Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
Value
600
600
± 20
± 40
6.0
4.6
18
125
1.0
2.5
â 55 to 150
405
1.0
62.5
50
260
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
EâFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
REV 1
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
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