MTB50N06EL Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET.™
Power Field Effect Transistors
D2PAK for Surface Mount
Logic Level TMOS (L2TMOSā™ā)
N–Channel Enhancement–Mode Silicon Gate
These TMOS Power FETs are designed for high speed, low loss
power switching applications such as switching regulators, convert-
ers, solenoid and relay drivers. This Logic Level Series part is
specified to operate with level logic gate–to–source voltage of 5 volt
and 4 volt.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.028 Ω max
• Replace External Zener Transient Suppressor — Absorbs High
Energy in the Avalanche Mode
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
MTB50N06EL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
50 AMPERES
60 VOLTS
RDS(on) = 0.028 OHM
®
D
CASE 418B–02, Style 2
D2PAK
S
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vpk, IL = 50 Apk, L = 0.32 mH, RG = 25 Ω )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R_θJC
R_θJA
R_θJA
TL
60
60
±15
50
28
142
125
1.0
2.5
– 55 to 150
400
1.0
62.5
50
260
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET, Designer’s and L2TMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
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