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MTB30P06V Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 30 AMPERES 60 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB30P06V/D
⢠Designer's Data Sheet
TMOS Vâ¢
Power Field Effect Transistor
D2PAK for Surface Mount
PâChannel EnhancementâMode Silicon Gate
TMOS V is a new technology designed to achieve an onâresis-
tance area product about oneâhalf that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS EâFET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
TM
D
MTB30P06V
Motorola Preferred Device
TMOS POWER FET
30 AMPERES
60 VOLTS
RDS(on) = 0.080 OHM
New Features of TMOS V
⢠Onâresistance Area Product about Oneâhalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
G
⢠Faster Switching than EâFET Predecessors
S
Features Common to TMOS V and TMOS EâFETS
⢠Avalanche Energy Specified
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Static Parameters are the Same for both TMOS V and TMOS EâFET
⢠Surface Mount Package Available in 16 mm 13âinch/2500 Unit Tape & Reel,
Add T4 Suffix to Part Number
CASE 418Bâ02, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâtoâSource Voltage
VDSS
60
Vdc
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
VDGR
60
Vdc
GateâtoâSource Voltage â Continuous
GateâtoâSource Voltage â Nonârepetitive (tp ⤠10 ms)
VGS
± 15
Vdc
VGSM
± 25
Vpk
Drain Current â Continuous @ 25°C
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
ID
30
Adc
ID
19
IDM
105
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD
125
Watts
0.83
W/°C
3.0
Operating and Storage Temperature Range
TJ, Tstg â 55 to 175
°C
Single Pulse DrainâtoâSource Avalanche Energy â STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 30 Apk, L = 1.0 mH, RG = 25 â¦)
EAS
450
mJ
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Thermal Resistance â Junction to Ambient (1)
RθJC
1.2
°C/W
RθJA
62.5
RθJA
50
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from Case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET, Designerâs and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
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