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MTB2N60E Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 600 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB2N60E/D
⢠Designer's Data Sheet
TMOS E-FET.â¢
High Energy Power FET
D2PAK for Surface Mount
NâChannel EnhancementâMode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltageâblocking capability without
degrading performance over time. In addition, this advanced TMOS
EâFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drainâtoâsource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
G
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
®
D
S
MTB2N60E
Motorola Preferred Device
TMOS POWER FET
2.0 AMPERES
600 VOLTS
RDS(on) = 3.8 OHM
CASE 418Bâ02, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainâtoâSource Voltage
VDSS
600
Vdc
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
VDGR
600
Vdc
GateâtoâSource Voltage â Continuous
â NonâRepetitive (tp ⤠10 ms)
VGS
± 20
Vdc
VGSM
± 40
Vpk
Drain Current â Continuous
â Continuous @ 100°C
â Single Pulse (tp ⤠10 µs)
ID
2.0
Adc
ID
1.3
IDM
7.0
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD
50
Watts
0.4
W/°C
2.5
Watts
Operating and Storage Temperature Range
TJ, Tstg â 55 to 150 °C
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 2.0 Apk, L = 95 mH, RG = 25 â¦)
EAS
190
mJ
Thermal Resistance â Junction to Case
â Junction to Ambient
â Junction to Ambient (1)
RθJC
RθJA
RθJA
2.5
°C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
EâFET and Designerâs are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
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