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MSD6150 Datasheet, PDF (1/4 Pages) Motorola, Inc – Dual Diode Common Anode
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Diode
Common Anode
Order this document
by MSD6150/D
MSD6150
3 Anode
Cathode 1 2 Cathode
1
2
3
CASE 29–04, STYLE 4
TO–92 (TO–226AA)
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Forward Recurrent Current
Peak Forward Surge Current
(Pulse Width = 10 µsec)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VR
70
IF
200
IFM(surge)
500
PD(1)
TJ, Tstg(1)
625
5.0
– 55 to +135
Vdc
mAdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Current
(VR = 50 Vdc)
Forward Voltage
(IF = 10 mAdc)
Capacitance
(VR = 0)
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
V(BR)
70
—
—
Vdc
IR
—
—
0.1
µAdc
VF
—
0.80
1.0
Vdc
C
—
5.0
8.0
pF
trr
—
—
100
ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997