MSD601RT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN General Purpose Amplifier Transistors Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
Order this document
by MSD601–RT1/D
MSD601-RT1*
MSD601-ST1
*Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
BASE
1
EMITTER
Value
Unit
Collector–Base Voltage
V(BR)CBO
60
Vdc
Collector–Emitter Voltage
V(BR)CEO
50
Vdc
Emitter–Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Collector Current — Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
V(BR)CBO
60
V(BR)EBO
7.0
Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0)
ICBO
—
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601–RT1
MSD601–ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
ICEO
—
hFE1
210
290
hFE2
90
Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
—
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
DEVICE MARKING
Marking Symbol
3
2
1
CASE 318D–03, STYLE 1
SC–59
Max
Unit
—
Vdc
—
Vdc
—
Vdc
0.1
µAdc
100
nAdc
—
340
460
—
0.5
Vdc
YR^X
YS^X
MSD601–RT1
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996