MSD42WT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
NPN Silicon General Purpose
High Voltage Transistor
This NPN Silicon Planar Transistor is designed for general purpose amplifier
applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
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by MSD42WT1/D
MSD42WT1
Motorola Preferred Devices
NPN GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
1
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
DEVICE MARKING
V(BR)CBO
300
V(BR)CEO
300
V(BR)EBO
6.0
IC
150
Vdc
Vdc
Vdc
mAdc
CASE 419–02, STYLE 3
SC–70/SOT–323
COLLECTOR
3
MSD42WT1 = H1D
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
PD
150
mW
TJ
150
°C
Tstg
– 55 ~ + 150
°C
1
BASE
2
EMITTER
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0)
V(BR)CBO
300
—
Vdc
Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0)
V(BR)EBO
6.0
—
Vdc
Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0)
ICBO
—
0.1
µA
Emitter–Base Cutoff Current (VEB = 6.0 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
Collector-Emitter Saturation Voltage(2) (IC = 200 mAdc, IB = 2.0 mAdc)
IEBO
—
hFE1
25
hFE2
40
VCE(sat)
—
0.1
µA
—
—
—
0.5
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
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