MSC3130T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN RF Amplifier Transistors Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN RF Amplifier Transistor
Surface Mount
COLLECTOR
3
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by MSC3130T1/D
MSC3130T1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector–Base Voltage
VCBO
Collector–Emitter Voltage
VCEO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
DC Current Gain(1)
(VCE = 4.0 Vdc, IC = 5.0 mAdc)
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 4.0 mAdc)
Current–Gain — Bandwidth Product
(VCB = 4.0 Vdc, IE = –5.0 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
DEVICE MARKING
2
BASE
1
EMITTER
Value
15
10
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
Max
Unit
200
mW
150
°C
– 55 ~ +150
°C
Symbol
ICBO
VCEO
VEBO
hFE
VCE(sat)
fT
3
2
1
CASE 318D–03, STYLE 1
SC–59
Min
Max
Unit
—
1.0
µAdc
10
—
Vdc
3.0
—
Vdc
75
400
—
—
0.5
Vdc
1.4
2.5
GHz
Marking Symbol
1S^X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996