MSC2295-BT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN RF Amplifier Transistors Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN RF Amplifier Transistors
Surface Mount
COLLECTOR
3
Order this document
by MSC2295–BT1/D
MSC2295-BT1
MSC2295-CT1
Motorola Preferred Devices
2
BASE
1
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
V(BR)CBO
30
V(BR)CEO
20
V(BR)EBO
5.0
IC
30
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
mW
TJ
150
°C
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Collector–Base Cutoff Current
(VCB = 10 Vdc, IE = 0)
DC Current Gain(1)
(VCB = 10 Vdc, IC = –1.0 mAdc)
MSC2295–BT1
MSC2295–CT1
ICBO
hFE
Collector–Gain — Bandwidth Product
fT
(VCB = 10 Vdc, IE = –1.0 mAdc)
Reverse Transistor Capacitance
Cre
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
DEVICE MARKING
Marking Symbol
VB^X
VC^X
3
2
1
CASE 318D–03, STYLE 1
SC–59
Min
Max
Unit
—
0.1
µAdc
—
70
140
110
220
150
—
MHz
—
1.5
pF
MSC2295–BT1
MSC2295–CT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996