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MSB92WT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – PNP GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
PNP Silicon General Purpose
High Voltage Transistor
This PNP Silicon Planar Transistor is designed for general purpose amplifier
applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
⢠Available in 8 mm, 7-inch/3000 Unit Tape and Reel
Order this document
by MSB92WT1/D
MSB92WT1
Motorola Preferred Devices
PNP GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
1
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current â Continuous
DEVICE MARKING
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
â300
â300
â5.0
150
Vdc
Vdc
Vdc
mAdc
CASE 419â02, STYLE 3
SCâ70/SOTâ323
COLLECTOR
3
MSB92WT1 = H2D
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
PD
150
mW
TJ
150
°C
Tstg
â 55 ~ + 150
°C
1
BASE
2
EMITTER
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = â1.0 mAdc, IB = 0)
V(BR)CEO
â300
â
Vdc
Collector-Base Breakdown Voltage (IC = â100 µAdc, IE = 0)
V(BR)CBO
â300
â
Vdc
Emitter-Base Breakdown Voltage (IE = â100 µAdc, IE = 0)
V(BR)EBO
â5.0
â
Vdc
Collector-Base Cutoff Current (VCB = â200 Vdc, IE = 0)
ICBO
â
â0.1
µA
EmitterâBase Cutoff Current (VEB = â6.0 Vdc, IB = 0)
DC Current Gain(2)
(VCE = â10 Vdc, IC = â1.0 mAdc)
(VCE = â10 Vdc, IC = â30 mAdc)
Collector-Emitter Saturation Voltage(2) (IC = â200 mAdc, IB = â2.0 mAdc)
IEBO
â
â0.1
µA
hFE1
hFE2
â
25
â
40
â
VCE(sat)
â
â0.5
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ⤠300 µs, D.C. ⤠2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMoototorroollaa, ISncm. 1a9l9lâ7Signal Transistors, FETs and Diodes Device Data
1
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