MSB710QT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – PNP General Purpose Amplifier Transistors Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSB710–QT1/D
PNP General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
DEVICE MARKING
Marking Symbol
CQ^X
2
BASE
1
EMITTER
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Symbol
PD
TJ
Tstg
CR^X
MSB710–QT1
MSB710–RT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
MSB710-QT1
MSB710-RT1*
*Motorola Preferred Device
3
2
1
CASE 318D–03, STYLE 1
SC–59
Value
– 60
– 50
– 7.0
– 500
–1.0
Max
200
150
– 55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Adc
Unit
mW
°C
°C
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996