MSA1022CT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – PNP RF Amplifier Transistor Surface Mount

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSA1022–CT1/D
PNP RF Amplifier Transistor
Surface Mount
COLLECTOR
3
MSA1022-CT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector–Base Voltage
VCBO
Collector–Emitter Voltage
VCEO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
Collector–Emitter Breakdown Voltage
(VCE = – 20 Vdc, IB = 0)
Emitter–Base Breakdown Voltage
(VEB = – 5.0 Vdc, IC = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –1.0 mAdc)
Current–Gain — Bandwidth Product
(VCB = –10 Vdc, IE = 1.0 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
DEVICE MARKING
2
BASE
1
EMITTER
Value
– 30
– 20
– 5.0
– 30
Unit
Vdc
Vdc
Vdc
mAdc
Max
Unit
200
mW
150
°C
– 55 ~ +150
°C
Symbol
ICBO
ICEO
IEBO
hFE
fT
3
2
1
CASE 318D–03, STYLE 1
SC–59
Min
Max
Unit
—
– 0.1
µAdc
—
–100
µAdc
—
–10
µAdc
110
220
—
150
—
MHz
Marking Symbol
EC^X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MSA1022–BT1/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996