MRW54001 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE LINEAR POWER TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Linear
Power Transistors
. . . designed primarily for large–signal output and driver amplifier stages in the
1.0 to 4.0 GHz frequency range.
• Designed for Class A or AB, Common–Emitter Linear Power Amplifiers
• Specified 20 Volt, 2.0 GHz Characteristics:
Output Power — 0.5 Watt
Power Gain — 10 to 11 dB
• 100% Tested for Load Mismatch at All Phase Angles with ∞:1 VSWR
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
Order this document
by MRW54001/D
MRW54001
10 – 11 dB
1.0 – 4.0 GHz
0.5 WATT
MICROWAVE LINEAR
POWER TRANSISTORS
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.25 mA, IC = 0)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Symbol
VCEO
VCES
VEBO
TJ
Tstg
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
Value
Unit
22
Vdc
50
Vdc
3.5
Vdc
200
°C
– 65 to + 200
°C
Symbol
R_θJC
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
Cob
CASE 400–01, STYLE 1
(TW200)
Max
Unit
40
°C/W
Min
Typ
Max
Unit
22
—
—
Vdc
50
—
—
Vdc
45
—
—
Vdc
3.5
—
—
Vdc
—
—
0.25
mAdc
20
—
120
—
—
—
3.5
pF
(continued)
MRW54001
2–1