MRW2001 Datasheet, PDF (1/6 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave
Power Transistors
Designed primarily for large–signal output and driver amplifier stages in the
1.0 to 2.3 GHz frequency range.
• Designed for Class B or C, Common Base Power Amplifiers
• Specified 28 Volt, 2.0 GHz Characteristics:
Output Power — 1.0 to 20 Watts
Power Gain — 5.2 to 9.0 dB, Min
Collector Efficiency — 40%, Min
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRW2001/D
MRW2001
MRW2003
5.2 – 9.0 dB
1.0 – 2.3 GHz
1.0 – 20 W
MICROWAVE
POWER TRANSISTORS
CASE 328A–03, STYLE 1
(GP–13)
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
MRW2001
MRW2003
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, RF, Junction to Case
MRW2001
MRW2003
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
(IC = 20 mA, VBE = 0)
MRW2001
MRW2003
V(BR)CES
Symbol
VCES
VEBO
IC
TJ
Tstg
Symbol
R_θJC
Min
50
50
Value
Unit
50
Vdc
3.5
Vdc
Adc
0.25
0.5
200
°C
– 65 to + 200
°C
Max
Unit
°C/W
25
15
Typ
Max
Unit
Vdc
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(continued)
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRW2001 MRW2003
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