MRFIC1805 Datasheet, PDF (1/10 Pages) Motorola, Inc – 1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1805/D
The MRFIC Line
1.9 GHz GaAs Power Amplifier
This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead
plastic package is designed for output or driver applications in 1.9 GHz PCS
handsets and basestations. The design is optimized for 3.0 Volt operation in
systems such as Japan’s PHS, Europe’s DECT and the emerging North
American PCS services. With modifications to the simple off–chip matching, the
device can be used in other applications from 1.5 to 2.5 GHz.
• High Output Capability = 27 dBm Typical Psat
21.5 dBm Typical with PHS Format
• High Gain = 21 dB Typical Small Signal, 20 dB at Pout = 22 dBm
• Low Current Drain = 170 mA Typical with PHS Format
250 mA Typical with DECT Format
• Low–Cost, Low Profile Plastic TSSOP Package
• Order MRFIC1805R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
• Device Marking = M1805
ABSOLUTE MAXIMUM RATINGS (TA = 25_C unless otherwise noted)
Ratings
Supply Voltage
Supply Voltage
RF Input Power
Drain Current
Thermal Resistance, Junction to Air
Operating Junction Temperature
Ambient Operating Temperature
Storage Temperature
Symbol
VDD, VD1,
VD2
VSS
RFin
IDD
R_θJA
TJ
TA
Tstg
MRFIC1805
1.9 GHz
POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 948C–03
(TSSOP–16)
Value
6
–4
+10
500
240
+175
–30 to +85
–65 to +125
Unit
Vdc
Vdc
dBm
mA
/W
_C
_C
_C
RF OUT/ RF OUT/
PCNTRL GND VD1 GND GND VD2 VD2 N/C
16
15
14
13
12
11
10
9
GATE
BIAS
1
2
3
4
5
6
7
8
VSS GND GND GND GND GND RF IN N/C
Pin Connections and Functional Block Diagram
REV 1
©_MM_Oo_Tto_Oro_Rla,_OIn_Lc_A. 19_R9_F7 _{DEVICE DATA}
MRFIC1805
1