MRFG35003M6T1 Datasheet, PDF (1/8 Pages) Motorola, Inc – GALLIUM ARSENIDE PHEMT

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFG35003M6T1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 6 Volts,
I_DQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003M6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466–02, STYLE 1
PLD–1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Gate–Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature⁽¹⁾
Operating Case Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
Symbol
V_DSS
P_D
V_GS
P_in
T_stg
T_ch
T_C
Symbol
R_θJC
(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
Value
8
22.7⁽²⁾
0.15⁽²⁾
–5
24
– 65 to +150
175
– 20 to +85
Max
6.6⁽²⁾
Rating
1
Unit
Vdc
Watts
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
REV 1
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R3 ^{F DEVICE DATA} _{For More Information On This Product,}
Go to: www.freescale.com
MRFG35003M6T1
1