MRF9822T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
The RF Small Signal Line
Gallium Arsenide PHEMT
Pseudomorphic High Electron Mobility Transistor
Designed for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems.
• Performance Specifications at 3.5 V, 850 MHz:
Output Power = 31 dBm Min
Power Gain = 11 dB Typ
Efficiency = 70% Min
• Guaranteed Ruggedness at Load VSWR = 20:1
• New Plastic Surface Mount Package
• Available in Tape and Reel Packaging Options:
T1 suffix = 1,000 Units per Reel
• Device Marking = 9822
Order this document
by MRF9822T1/D
MRF9822T1
31 dBm, 850 MHz
HIGH FREQUENCY
POWER TRANSISTOR
GaAs PHEMT
CASE 449–02, STYLE 1
(PLD–1)
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Gate Breakdown Voltage
(ID = 1.5 mA)
BVGDO
Off–state Leakage Current
(VDS = 5.5 V, VGS = –2. 6 V)
IDS(off)
Gate–Source Leakage Current
(VGS = –2. 6 V)
IGSS
Symbol
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Min
12
–
–
Value
12
–6
3
10
100
– 65 to +150
150
Max
10
Typ
Max
–
–
–
3
–
10
Unit
Vdc
Vdc
Adc
W
mW/°C
°C
°C
Unit
°C/W
Unit
Vdc
mA
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF9822T1
1