MRF9820T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – SURFACE MOUNT LOW NOISE ENHANCEMENT MODE GaAs CASCODE

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9820T1/D
Advance Information
The RF Small Signal Line
GaAs MESFET AGC Amplifier
The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use
in low noise front end amplifier or downconverter applications. The device
contains two enhancement mode MESFETs connected in cascode to allow
access to both gates for gain control or injection of LO signals. This device is
well suited for low voltage, low current front–end applications such as paging,
cellular, GSM, DECT, and other portable wireless systems.
• Low Noise Figure: 1.5 dB @ 940 MHz, 1 mA
• Built In ESD Protection
• Does Not Require a Negative Supply Voltage
• RF Power Gain 16 dB @ 940 MHz, 1 mA
• High Third Order Intercept Point
• Industry Standard SOT–143 Surface Mount Package
• Order MRF9820T1 for Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MRF9820T1
SURFACE MOUNT
LOW NOISE
ENHANCEMENT MODE
GaAs CASCODE
CASE 318A–05, STYLE 11
(SOT–143)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate 1–Source Voltage
Gate 2–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 75°C
Derate above 75°C
Storage Temperature Range
Operating Channel Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Channel to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Gate 1 Leakage Current (VDS = 2 V, VG1S = 0.425 V, VG2S = 1 V)
Gate 2 Leakage Current (VDS = 2 V, VG1S = 0.5 V, VG2S = 0.425 V)
Threshold Voltage (VDS = 3 V, VG2S = 1 V, ID = 1 mA)
Gate 1–to–Source Cutoff Voltage (VDS = 2 V, VG2S = 1 V, ID = 200 µA)
Gate 2–to–Source Cutoff Voltage (VDS = 2 V, VG1S = 0.5 V, ID = 200 µA)
Forward Transconductance (VDS = 2 V, VG2S = 1 V, ID = 1 mA)
Drain–to–Source Leakage Current (VDS = 2 V, VG1S = 0 V, VG2S = 0 V)
Symbol
VDS
VG1S
VG2S
ID
PD
Tstg
Tch
Symbol
R_{θch–C}
Symbol
IG1S
IG2S
Vth
VG1S(off)
VG2S(off)
gm
IDS(off)
Value
6
–4
–4
IDSS
231
4.3
– 55 to +150
150
Max
325
Value
4
4
275 (min)
425 (max)
100 (min)
360 (max)
10 (min)
370 (max)
9 (min)
2 (max)
Unit
Vdc
Vdc
Vdc
—
mW
mW/°C
°C
°C
Unit
°C/W
Unit
µA
µA
mV
mV
mV
mS
µA
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF9820T1
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