MRF9811T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – HIGH FREQUENCY GaAs FET TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9811T1/D
Advance Information
The RF Small Signal Line
Gallium Arsenide
N–Channel Depletion–Mode MESFET
Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.
Typical applications are cellular radios and personal communication
transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT.
• Performance Specifications at 900 MHz, 5.8 V:
Output Power = 21 dBm
Power Gain = 14 dB Min
Drain Efficiency = 55% Min
• Plastic Surface Mount Package
• Order MRF9811T1 for Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MRF9811T1
21 dBm, 5.8 V
HIGH FREQUENCY
GaAs FET TRANSISTOR
CASE 318A–05, STYLE 7
(SOT–143)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate–Drain Breakdown Voltage
(IGD = 0.25 mA, Source Open)
Zero Gate Voltage Drain Current
(VDS = 1.5 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = –5.0 Vdc, Drain Open)
V(BR)GDO
IDSS
IGSO
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Min
15
0.35
–
Value
10
±5
0.7
0.77
7.7
– 55 to +150
150
Max
130
Typ
Max
–
–
–
–
0.5
10
Unit
Vdc
Vdc
Adc
W
mW/°C
°C
°C
Unit
°C/W
Unit
Vdc
Adc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF9811T1
1