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MRF9745T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – HIGH FREQUENCY POWER TRANSISTOR LDMOS FET | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
The RF Small Signal Line
Silicon Lateral FET
NâChannel EnhancementâMode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems.
⢠Performance Specifications at 5.8 V, 900 MHz:
Output Power = 30 dBm Min
Power Gain = 10 dB Typ
Efficiency = 50% Min
⢠Guaranteed Ruggedness at Load VSWR = 20:1
⢠New Plastic Surface Mount Package
⢠Available in Tape and Reel Packaging.
T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel
⢠Device Marking = 9745
Order this document
by MRF9745T1/D
MRF9745T1
30 dBm, 900 MHz
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
CASE 449â02, STYLE 1
(PLDâ1)
MAXIMUM RATINGS
Rating
DrainâSource Voltage
DrainâGate Voltage (RGS = 1 Mâ¦)
GateâSource Voltage
Drain Current â Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DrainâSource Leakage Current
(VDS = 35 V, VGS = 0)
GateâSource Leakage Current
(VGS = 5 V, VDS = 0)
IDSS
IGSS
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Min
â
â
Value
35
25
± 10
2
10
100
â 65 to +150
150
Max
10
Typ
Max
â
10
â
1
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
°C
°C
Unit
°C/W
Unit
µAdc
µAdc
NOTE â CAUTION â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF9745T1
1
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