MRF949T1 Datasheet, PDF (1/14 Pages) Motorola, Inc – LOW NOISE TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Low Noise Transistors
Motorola’s MRF949 is a high performance NPN transistor designed for use in
high gain, low noise small–signal amplifiers. The MRF949 is well suited for low
voltage wireless applications. This device features a 9 GHz DC current
gain–bandwidth product with excellent linearity.
• Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA
• High Current Gain–Bandwidth Product, ft = 9 GHz @ 15 mA
• Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA
• Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA
• Fully Ion–Implanted with Gold Metallization and Nitride Passivation
• Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
Order this document
by MRF949T1/D
MRF949T1
ICmax = 50 mA
LOW NOISE
TRANSISTORS
CASE 463–01, STYLE 1
(SC–90)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
DEVICE MARKINGS
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
R_θJC
10
20
1.5
0.144
1.92
50
150
– 55 to +150
520
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
MRF949T1 = JL
(1) To calculate the junction temperature use TJ = (PD x R_θJC) + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
©MMOotoTrOolaR, OIncL.A19R98F DEVICE DATA
MRF949T1
1