|
MRF927T1 Datasheet, PDF (1/12 Pages) Motorola, Inc – LOW NOISE HIGH FREQUENCY TRANSISTOR | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Small Signal Line
NPN Silicon Low Voltage,
Low Current, Low Noise,
High-Frequency Transistors
Designed for use in low voltage, low current applications at frequencies to
2.0 GHz. Specifically aimed at portable communication devices such as
pagers and handâheld phones.
⢠High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA
⢠Small, SurfaceâMount Package (SCâ70)
⢠High Current GainâBandwidth Product at Low Current,
Low Voltage (fÏ = 8.0 GHz Typ @ 3.0 V, 5.0 mA)
⢠Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.
Order this document
by MRF927T1/D
MRF927T1
MRF927T3
IC = 10 mA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctionâtoâCase
DEVICE MARKING
MRF927T1 = F
CASE 419â02, STYLE 3
(SCâ70/SOTâ323)
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
RθJC
Value
10
20
2.5
10
100
1.0
â 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Value
1000
Unit
°C/W
REV 1
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF927T1 MRF927T3
1
|
▷ |