MRF917T1 Datasheet, PDF (1/12 Pages) Motorola, Inc – LOW NOISE HIGH FREQUENCY TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Small Signal Line
NPN Silicon
High-Frequency Transistors
Designed for low noise, wide dynamic range front end amplifiers, at
frequencies to 1.5 GHz. Specifically aimed at portable communication devices
such as pagers and hand–held phones.
• Small, Surface–Mount Package (SC–70)
• High Current Gain–Bandwidth Product (f_τ = 6.0 GHz Typ @ 6.0 V, 20 mA)
• Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
• Available in Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
Order this document
from RF Marketing
MRF917T1
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419–02, STYLE 3
(SC–70/SOT–323)
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
Operating Temperature Range
TJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction–to–Case (1)
DEVICE MARKING
R_θJC
MRF917T1 = K
(1) Case temperature measured on the collector lead immediately adjacent to body of package.
Value
12
20
2.0
60
222
3.0
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Value
338
Unit
°C/W
© MMoOtoTroOlaR, InOc.L1A99R6 F DEVICE DATA
MRF917T1
1