MRF9120 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF Power Field Effect Transistors

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF9120/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I_DQ = 2 x 500 mA
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: - 45 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9120R3
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 375B - 04, STYLE 1
NI - 860
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
200
Value (1)
0.45
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 7
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MRF9120R3 MRF9120LR3
1