MRF9100 Datasheet, PDF (1/12 Pages) Motorola, Inc – GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9100/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 26 volt base station equipment.
• On–Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts (Typ)
Power Gain @ P1dB — 16.5 dB (Typ)
Efficiency @ P1dB — 53% (Typ)
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9100
MRF9100R3
MRF9100SR3
GSM/EDGE 900 MHz, 110 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9100)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9100SR3)
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Value
65
+15, –0.5
175
1.0
–65 to +200
200
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Symbol
R_θJC
Max
1.0
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
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MRF9100 MRF9100R3 MRF9100SR3
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